Microwave and mm-wave components, amplifiers, mixers, Gunn oscillators, frequency multipliers, filters, receivers, frequency translators and mm-wave assemblies

 Gunn Oscillators
  • High reliability and Performance
  • Combined Mechanical and Electrical Tuning
  • Narrow to Broadband Monotonic Tuning
  • High RF Output Power

These Gunn Oscillators use high Q resonator circuits to produce clean and stable output signals. Either GaAs or InP Gunn diodes are used depending on the output frequency and power requirements. InP Gunn diodes are generally used in the high frequency, high power oscillators. They offer lower AM noise along with higher efficiency. The bias input contains an integral low frequency suppression filter and over voltage protection circuit.  These oscillators can be used as a laboratory source, a multiplier driver, local oscillator or whenever a reliable source for the generation of millimeter wave signals is required.

Click to see specifications on:

[Mechanical and fixed tuned Gunn oscillators]

[Varactor tuned Gunn oscillators]

Outline Dimensions (in inches)

W/G BAND

A

B

C

FLANGE

WR-42

.88

.75

1.50

UG-595/U

`WR-28

.75

.60

1.25

UG-599/U

WR-22

.75

.60

1.30

UG-383/U

WR-19

.75

.60

1.30

UG-383/UM

WR-15

.75

.80

1.30

UG-385/U

WR-12

.75

.80

1.30

UG-387/U

WR-10

.75

.80

1.30

UG-387/UM

* All dimensions are subject to change without notice.

Mechanical and Fixed Tuned Gunn oscillators
 

GaAs

InP
Power Output  (Max)(mW)

Tuning Bandwidth (Max) % of center frequency

GaAs

InP
Frequency Stability (Typ) (MHz/oC)

Power Stability (Max) (dB/oC)

GaAs

InP
Bias Voltage (Typ) (volts)

GaAs

InP
Bias Current (Typ/Max) (amps)

Frequency Range (GHz)

18-26

26-40

40-55

55-75

75-95

95-110

300

250

150

60

25

10
     

100

65

25

10

20

15

5

5

5

0.4

0.5

0.7

4

6

7
     

2

3

4

-.04

-.04

-.04

-.04

-.04

-.04

6

5

4

4

4

4
     

 12

10

10

.8/1.4

.8/1.4

.8/1.4

   .8/1.4 

.7/1.3

.7/1.3
     

.3/.4

.2/.4

.2/.4

Notes:

1.  The varactor tuning voltage is from the Gunn bias voltage to -20 volts (ex. +10v to -20v), or from Gunn bias voltage to +30v (ex. +5v to +30v).

2.  When a temperature controller is used, the output power is reduced by approximately 1.5dB.

3.  The threshold current is approximately 1.3 times the operating current. InP Gunn diodes do not exhibit a threshold current.

4. Storage temperature is -55oC to +125oC. The operating temperature for GaAs Gunn diodes is -55oC to +71oC. The operating temperature for InP Gunn diodes is -55oC to +60oC.

Varactor Tuned Gunn Oscillators
 

GaAs

InP
Power Output  (Max)(mW)

Tuning Bandwidth (Max) % of center frequency

GaAs

InP
Frequency Stability (Typ) (MHz/oC)

Power Stability (Max) (dB/oC)

GaAs

InP
Bias Voltage (Typ) (volts)

GaAs

InP
Bias Current (Typ/Max) (amps)

Frequency Range (GHz)

18-26

26-40

40-55

55-75

75-95

95-110

200

150

75

30

15

10
     

50

50

20

2.5

3

4

5

5

5

0.8

1.0

1.5

5

7

8
     

3

4

5

-.04

-.04

-.04

-.04

-.04

-.04

6

5

4

4

4

4
     

 12

10

10

.8/1.4

.8/1.4

.8/1.4

   .8/1.4 

.7/1.3

.7/1.3
     

.3/.4

.2/.4

.2/.4

Notes:

1.  The varactor tuning voltage is from the Gunn bias voltage to -20 volts (ex. +10v to -20v), or from Gunn bias voltage to +30v (ex. +5v to +30v).

2.  When a temperature controller is used, the output power is reduced by approximately 1.5dB.

3.  The threshold current is approximately 1.3 times the operating current. InP Gunn diodes do not exhibit a threshold current.

4. Storage temperature is -55oC to +125oC. The operating temperature for GaAs Gunn diodes is -55oC to +71oC. The operating temperature for InP Gunn diodes is -55oC to +60oC.

212 East Gutierrez Street, Santa Barbara, California  USA 93101

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